基极电流是载流子在基区扩散与复合形成的复合电流。基区是双极型晶体管（BJT）结构中的一个重要区域。BJT是由两个背靠背的pn结组成的，这两个pn结中间的公共区域就是基区。
晶体管基极电流 [电子] transistor base current
共基极电流增益 Common-Base Current Gain
基极电流驱动 base current drive
基极电流源 base current source
饱和基极电流 saturation base current
基极电流调节旋钮 base current regulating knob
共基极电流传输系数 Common Base Current Gain
集电极基极电流增益 [电子] collector-base current gain
集电极-基极电流增益 collector-to-base current gain
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辐照后基极电流、结漏电流增大，集电极电流、击穿电压减小。
The base current and the junction leakage current increase, while the collector current and the breakdown voltage decrease for SiGe HBTs after radiation.
本文从包括埋层影响的集区杂质分布出发，求出了寄生PNP晶体管的共基极电流放大系数。
We try to obtain the common-base current gain a of the parasitic PNP transistor from the eloping profile of the collector region including the effect of buried-layer.
输入失调电流是两个差动输入端的基极输入电流，当两个输入端的源阻抗不相等时，它可引起仪表放大器的失调误差。
Input offset current is the difference between the two input bias currents and this leads to offset errors in in-amps when source resistances in the two input terminals are unequal.
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