... 型掺杂 n type doping n 型衬底 n type substrate n 阱互补金属氧化物半导体工艺 n well cmos process n ...
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... loudspeakertelephonedevice带有扬声颇电话机 ntypedopingn型掺杂 tia-triggerinternetadapter-切换开关的因特网 ...
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型掺杂剂 p dopant modifier ; p type dopant ; p dopant ; ptypedopantp
型掺杂的漏极 n doped drain ; ndopeddrainn ; n doped cesspool
型掺杂剂原子 n type dopant atom ; ntypedopantatomn
型掺杂的源极 n doped source ; ndopedsourcen
型掺杂源极 p doped source ; pdopedsourcep
型掺杂漏极 p doped drain ; pdopeddrainp
负型掺杂 N-type doping
p型掺杂金刚石 boron-doped diamond
该二电极是分别配置于反射层及第一型掺杂层上。
The two electrodes are set on the reflection layer and the first doped layer.
因而P -型掺杂的聚乙炔在水溶液中是相当稳定的。
Therefore P-type doped polyacetylene is considerably stable in some concentrated aqueous solutions of electrolytes.
NMOS晶体管(A)的门电极(16)在n -型掺杂的不含锗的多晶硅层(14)上形成。
The gate electrodes (16) of the NMOS transistors (a) are formed in a layer of n-type doped polycrystalline silicon (14) without germanium.
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