采用一种新工艺制作了垂直腔面发射激光器(VCSEL)，即用开环分布孔取代以往的环形沟道作为氧化物限制技术的注入窗口。
A new process method, using open annulus distributed holes in place of ring trench as the lateral oxidation Windows, is reported to fabricate vertical-cavity surface emitting laser (VCSEL).
通过对垂直腔面发射激光器(VCSEL)台面结构的深入研究，提出了新型环形分布孔结构。并制作了这种新结构器件。
A new mesa structure with ring-distributed perforations was presented, and vertical-cavity surface emitting laser (VCSEL) with such structure was fabricated.
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