在半导体器件生产过程中，器件的引线大都是由蒸镀的方法来解决的。
During producing semiconductor device, it is prepared by evaporating to most of device leader.
本发明减小了后续刻蚀过程中在半导体器件上产生缺陷的威胁，提高了半导体器件的质量。
The invention reduces the threat of generating defects on a semiconductor device in the subsequent etching process and improves the quality of the semiconductor device.
并主要针对在半导体器件中应用最为广泛的金-硅合金焊接失效模式及其解决办法进行了讨论。
The failure models of gold-silicon alloy bonding are discussed and some solving ways are proposed.
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