受主即为掺入半导体中的一类杂质,它能接受半导体中的价带电子,产生同数量的空穴,从而改变半导体的导电性能。 例如,掺入半导体锗和硅中的三价元素硼、铟、镓等原子都是受主。 如果某一半导体的杂质总量中,受主的数量占多数,则这半导体是p型半导体。
这是在P型GaN的生长过程中,Mg原子取代Ga位而形 成受主(MgGa),从而释放出空穴,随着Mg流量的增加受主MgGa的浓度也增加,在相同的激活条件下,有更 多的受主释放出空穴。
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The result showed that As replaced Zn site instead of O site and formed acceptor defects, which helped to understand the microscopic structure of As in As-doped ZnO and also supported the AsZn-2VZn acceptor model.
存在,即As处于氧化态,这证明了As在薄膜中不是直接取代0的位置而形成受主缺陷,这一点有助于深入研究As掺杂zno的导电机制,也支持了Aszn一ZVz。
参考来源 - P型ZnO薄膜及其pThe VOF method is modified to lighten artificial diffusing which results from “Donor-Acceptor”method.
本文对处理自由表面的VOF法进行了改进,减轻了由“施主-受主”法导致的假扩散现象。
参考来源 - 电磁泵充型过程数值模拟技术研究·2,447,543篇论文数据,部分数据来源于NoteExpress
它应该是一个电子的施主还是受主?
不同方位的花粉密度受主风频率影响,主风方向花粉密度占58.07%。
The pollen density of different direction is affected by the main wind direction, 58.07% of pollen comes from the main wind direction.
不同方位的花粉密度受主风频率影响,主风方向花粉密度占58.07%。
The pollen density of different direction was affected by the main wind direction, 58.07% of pollen came from the main wind direction.
Great. Yup, it's going to be an electron acceptor, it wants to accept electrons, it wants to accept electron density.
很好,没错,它将是一个电子的受主,它想要接收电子,接收电子密度。
Is it going to be an electron donor or acceptor?
它应该是一个电子的施主还是受主?
And if we talk about what's going on in areas, or with atoms that have high electronegativity, and we think about whether they're electron donors or electron acceptors, what would you expect for an atom that has high electronegativity?
如果我们要讨论这片区域的情况,或者说讨论这些电负性很高的原子,我们会把它们想象成电子的施主,还是受主?,大家认为哪一种,是电负性很高的原子?
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