截止频率是影响共发射极、共基极和共集电极电路频率特性的重要因素。

Cut off frequency is the main factor influencing frequency properties of electrode circuits of common emitter, common base and common collector.

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图2 - 1 (a)给出了共发射极取向的晶体管的物理特性，同时也给出了硅器件的电压极性和大小。

Figure 2-1 (a) shows the physical representation of the BJT in its common-emitter orientation, and also shows typical voltage polarities and magnitudes for the case of a silicon device.

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在晶体管制作过程中采用了发射极-基极金属自对准、空气桥以及减薄等工艺改善其功率特性。

Base emitter metal self aligning, air bridge, and wafer thinning are used to improve microwave power performance.

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