...e）：半导体制造商在器件制作的最后一步根据用户要求确定金 属层的导线连接。器件量大时，经济上才合算。 3. 反熔丝（antifuse）：编程前，连接点被高阻物质分开，断路，编程高电压使 其熔化连接。 4.
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杂质掺杂多晶硅层设置于两绝缘区与反熔丝上。
An impurity doped polysilicon layer is defined over the two insulator regions and the anti-fuse.
所述集成电路包括具有二极管及与所述二极管连通的反熔丝的存储器单元。
Such integrated circuit includes a memory cell with a diode and an antifuse in communication with the diode.
在编程此反熔丝一次可编程非易失存储器单元后，已编程的区域(例如为连结)可作为二极管，其形成于反熔丝上。
A programmed region, i. e., a link, functioning as a diode, is formed on the anti-fuse after the anti-fuse OTP nonvolatile memory cell is programmed.
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