本文报道了在准粒子注入下超导铟膜中观测到的几种非平衡现象，其中包括“双能隙态”和非平衡中间电阻态等。
Some nonequilibrium phenomena, such as "double gaps state" and intermediate resistive state, are observed in superconducting in film under quasiparticles injection.
该模型考虑了载流子的速度饱和现象和寄生双极性晶体管的影响，获得了开态下LDMOS 漂移区中的电场分布。
The model considers the drift velocity saturation of carriers and influence of parasitic bipolar transistor. As a result, electric field profile of n drift in LDMOS at on state is obtained.
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