四参数正弦波拟合法是一种在精密测量中广泛使用的数学手段。
Sinusoid curve fit is a very useful method in precise measurement, based on the modeling measurement.
各种参数估值方法的比较表明，时间域最小二乘拟合法较为精确。
The comparison among various methods of parameter estimation shows that the least-squares fitting method in the time domain is more accurate one.
通过分析MOS管在饱和区失配因素，优化MOS管失配模型，提出用最小二乘曲线拟合法进行相关模型参数提取。
The factors of MOS transistor in the saturation region are analyzed, the mismatch models are optimized, and the model parameter extraction is done by least squares curve fitting method.
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