用氢气、丙酮蒸汽为源气体，通过微波增强的化学气相沉积方法，实现了在金刚石表面气相外延生长单晶金刚石薄膜。
Vapour epitaxial grown single-crystal diamond film on diamond surface was obtained by microwave reinforced chemical vapour deposition method, using hydrogen, aceton vapour as source of gas.
以硅烷和氧化二氮作为反应气体，采用等离子体增强化学气相沉积(PECVD)技术，不使用掺杂，在单晶硅衬底上制备了用于平面光波导的二氧化硅薄膜。
Without doping, plasma enhanced chemical vapor deposition (PECVD) of silica films on si substrates with gas mixtures of SiH_4 and N_2O is considered.
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