本发明涉及一种用于制造高质量半导体单晶锭的装置以及使用该装置的方法。
The present invention relates to an apparatus for manufacturing a high-quality semiconductor single crystal ingot and a method using the same.
利用离子注入技术，对稀土掺杂到半导体单晶硅中的光致发光行为进行了研究。
The photoluminescence properties of rare earth doped silicon were investigated with ion beam technique.
结果表明：随着触媒中碳化硼添加量的增加，含硼金刚石单晶的电阻率降低，可呈现半导体电阻特性。
The results show that the specific resistance of the boron-doped diamonds significantly decreased with the increase of boron concentration and to be a semiconductor.
应用推荐