对薄层电阻、接触、光掩模对准、线条宽度、器件参数与掺杂的相关性等内容进行了初步试验和分析。
The initial experiments on and analysis of sheet resistance, contact, photomask alignment, line width, and correlations between device parameters and dopants have been made.
LSI掩模图形的运算在版图分析和校验软件中占有重要的地位，而其中最核心的图形运算是布尔运算和拓扑分析。
The operations for LSI mask artwork play an important role in the mask artwork analysis and verification software. The core in these operations is the boolean operation and topological analysis.
本文分析了它的物理机制、掩模类型、编码过程、约束条件和优化方法。
The paper analyses the gray-tone mask physical mechanism, coding and optimum process.
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