根据固态噪声二极管在雪崩击穿状态的等效电路，设计出与之匹配的电路结构，以实现超噪比的最大输出。
For maximum exceed noise ratio generated, circuit structure to match the equivalent circuit diagram of the solid-state noise diode in avalanche breakdown state has been designed.
测试表明，器件具有高增益、高栅-漏击穿及低噪声特性。
The measurement has shown that the devices have higher associated gain, higher gate-drain breakdown voltage and lower noise figure.
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