所述电阻式存储器单元包括第一栅极、第二栅极、共用掺杂区域、接触窗插塞、位线以及电阻式存储器元件。

The resistive memory cell comprises a first gate, a second gate, a common doped region, a contact plug, a bit line and a resistive memory element.

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该方法还包括通过共用控制信号发出指令到选定的非易失性存储器控制器和易失性存储器中的一个。

The method also includes issuing commands to the selected one of the non-volatile memory controller and the volatile memory via the Shared control signals.

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本发明的实施例提供了一种用于通过共用接口访问非易失性存储器控制器和易失性存储器的方法和设备。

Embodiments of the invention provide a method and apparatus for accessing a non-volatile memory controller and a volatile memory via a Shared interface.

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