本文介绍高频光电导衰减法硅单晶少子寿命测试技术的改进。
Improvement of high frequency photoconductive decay technique for measuring silicon minority carrier lifetime is described.
用高频光电导衰减法（PCD）研究了热氧化钝化对直拉硅少子寿命的影响。
The effects of surface thermal oxidation on the minority carrier lifetime of Czochralski (CZ) silicon wafers are investigated by photoconductive decay (PCD) method.
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