制备了不同膜厚的光敏电极，研究了膜厚和光电流的关系。
Photosensitive electrodes with different thicknesses of film had been prepared. The relation between the thickness of film and photocurrent had been studied.
利用光敏高分子薄膜层实现了ITO象素电极和数据线之间的重迭，得到了更高的开口率。
The high aperture ratio is achieved by overlapping ITO pixel electrode and bus line using a photo_sensitive polymer.
指出在电极与光敏面交接处电功率发生跃变。
It is shown that the electric power changes suddenly at the boundary between the electrode and the photo-sensitive area.
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