从前的实验用单标测荧光强度变化证实这一观点。
This result confirmed that CD43 is a surface marker of B cell expressed increasely after the activation and differentiation of B cell.
得出在控制光照射方向上半导体材料的折射率随控制光强度变化而变化的分布情况。
We get the refractive index distribution in the semiconductor versus light intensity in the direction of controlling light.
这个被称为空氮的缺陷作用就像是一个传感器，因为它的荧光强度会随着其与磁旋的相互作用而变化。
The defect, known as a nitrogen-vacancy defect, functions as a sensor because its fluorescence intensity is altered by interactions with magnetic spins.
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