高压PMOSFET采用多晶场板偏置栅(offset-Gate)结构MOS管，采用不对称高压结构，仅在漏端制作漂移区。该结构高压管击穿电压为55V，阈值电压为0．92V，驱动电流为25mA，且不影响...
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其设计特点是采用了共源共栅电流镜，运放的输出作为驱动的同时还作为自身的偏置电路；其次是采用了带隙温度补偿技术。
The cascade current mirror was used in the circuit, and the output of the OPAMP was used for the bias of itself and to drive the next stage.
电路运用带隙温度补偿技术，采用共源共栅电流镜，两级运放输出用于自身偏置电路。
The technology of temperature compensation and cascade current mirror was used, and the output of two stage amplifier was used for the bias of itself.
因此介绍了一种采用自偏置低压共源共栅电流源的带隙基准电路结构，用两个电阻代替了偏置电路。
This paper introduces a low supply voltage band -gap reference circuit which used a self-bias cascode current mirror.
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