还就反向偏压以及CMOS工艺中介质与钝化层等因素对探测器响应度的影响进行了讨论。
The responsivity dependent on the insulated medium and passivation layers in CMOS process and reverse bias is also discussed.
研究了各种实验参数对沉积速率、薄膜组成及膜层硬度的影响，认为偏压是最具影响的参数。
The influence of various experimental parameters on deposition rate film composition and hardness has been studied, Bias is considered as the most effective Darameter.
位移电流的机理只对反向偏压或要维持空间电荷层所需要的非常弱的正向偏压条件下的电容器才有用。
The displacement current mechanism is operative only for capacitors under reverse bias or very weak forward bias conditions which maintain a space-charge layer .
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