结合俄歇电子能谱和红外光谱分析膜的微观结构，对薄膜的电子注入特性进行了理论分析与讨论。
The characteristics of the electron_injected film were analyzed and discussed, in terms of the microstructure analyses in the film with the Auger electron spectroscopy and the infrared spectrum.
当阱宽较大时，能级填充是导致光谱红移的主要原因，俄歇复合与载流子离域是导致效率下降的主要原因。
But as the well width increase, level filling is the main reason for the red-shift of spectrum, Auger recombination and carrier delocalization are the main reason for lower efficiency.
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