We developed a new process for low temperature crystallization of amorphous silicon films, by metal induced crystallization of amorphous silicon films at low temperature.
介绍了一种非晶硅薄膜低温晶化的新工艺———金属诱导非晶硅薄膜低温晶化。
参考来源 - 铝诱导非晶硅薄膜低温晶化及结构研究·2,447,543篇论文数据，部分数据来源于NoteExpress
介绍了一种非晶硅薄膜低温晶化的新工艺———金属诱导非晶硅薄膜低温晶化。
We developed a new process for low temperature crystallization of amorphous silicon films, by metal induced crystallization of amorphous silicon films at low temperature.
因此可以认为，在多晶硅薄膜生长的最初阶段，空间反应过程对低温晶化起重要作用。
It is considered that in the initial stage of film growth, the space reaction processes play an important role for the low-temperature crystallization of pc-Si film.
通过对非晶态样品的热分析，确定了它的晶化温度、玻璃转变温度和低温弛豫温度。
The thermal analysis was used to determine the crystallization temperature, the glass transformation temperature and low temperature relaxation temperature of the amorphous samples.
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