通过相图讨论了系统压力、激活温度和氟含量对低压金刚石薄膜淀积条件的影响，可以为实验研究提供理论指导。
The principles of effect of system pressure, activation temperature and content of fluorine were obtained by the phase diagrams.
在低压气相生长金刚石薄膜过程中，通过在衬底表面引入缺陷，通常是一种行之有效的提高成核密度的方法。
To increase nucleation density, the methods of introducing defects on substrate surface are more effective in the diamond thin films growth by means of the low pressure vapor phase deposition.
随着人们对低压CVD合成金刚石薄膜技术的深入研究，金刚石薄膜的质量有了很大的提高。
With the deeply investigation of synthesizing technique by low pressure CVD, the quality of diamond film is improved greatly.
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