本发明还进一步提供了上述存储单元在铜互连工艺中的集成制备方法。
The invention further provides an integrated preparation method for the memory unit in the copper interconnection process.
因此在集成电路设计中，互连工艺波动对集成电路性能的影响变得至关重要。
So the impact of process fluctuations on performance has become extremely critical in IC design.
金锡共晶互连工艺是一种可以有效改善大功率LED散热及互连强度的方法。
Based on the above tested results, the eutectic interconnect process is an effective method to improve the HP-LED heat dissipation.
应用推荐