碳及二氧化硅层可以分别通过高温煅烧、浓氨水溶解的方法除去。
The carbon and silica could be removed by calcination and etched away by ammonia, respectively.
本文研究了在薄二氧化硅层上快速热退火（RTA）形成的多晶硅化镍膜的电特性。
Polycrystalline nickel silicide film formed on thin oxide by rapid thermal annealing (RTA) has been investigated by capacitance voltage ( C V ) measurements.
本文用溶胶-凝胶法在塑料表面制作二氧化硅涂层，并利用制作的二氧化硅层来提取DNA。
In this paper, silicon oxidation layer was fabricated on plastic surface using sol-gel method, and the fabricated SiO_2 layer was used to extract DNA.
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