由于流过齐纳二极管的泄漏电流会在电阻器上产生电压降，所以希望使用低漏电的齐纳二极管。
Since the leakage current through the zener diodes results in a voltage drop across the resistor, low leakage zener devices are desirable.
源-测量单元还可以测量其它的二极管参数，包括正向电压降和击穿电压。
The Source-Measure Unit can also test other diode parameters, including forward voltage drop and breakdown voltage.
以避免由于不同的二极管的压降的不精确电压控制，样品取自在电池的一侧，即使这意味着一个非常小的电力浪费。
To avoid imprecise voltage control due to varying diode drop, the sample is taken from the battery side, even if this means a very small power waste.
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