称为耗尽型衬底晶体管 depleted substrate transistor ; DST
每一个二极管都从硅(或者蓝宝石为衬底的)晶片上切割下来。
Each diode is cut from a wafer of crystals layered over a base of silicon or sapphire.
其生长过程可以概括为衬底诱导的趋向氧化锌晶核在平衡状态下的快速生长。
Their growth mechanism could be attributed to the substrate-induced oriental nucleation and fast growth under thermodynamic equilibrium state.
结果表明，以多孔硅为衬底生长的碳纳米管管径均匀且离散分布，定向性良好。
The results show that carbon nanotubes grown on porous silicon substrate are well aligned with uniform diameter and dispersed distribution.
应用推荐