就电效应而言，基本粒子分为三种，中性的，正的和负的。

As far as electrical effects are concerned, fundamental particles come in three different kinds, neutral, positive, and negative.

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在部分耗尽型SOI结构中，SOI中顶层硅层的厚度为50-90nm，因此沟道下方的硅层中仅有部分被耗尽层占据，由此可导致电荷在耗尽层以下的电中性区域中累积，造成所谓的浮体效应。

In partially depleted SOI, the top layer is between 50- to 90-nm thick. Silicon under the channel is partially depleted of mobile charge.

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建立了考虑板料中性层偏移、包辛格效应等因素的拉延筋解析模型。

The paper suggested a draw bead model in which Bauschinger effect and incline of neutral layer were taken into account.

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