本文系统地介绍了一种以旋转法为基础的高精度中心偏测量仪的设计和设计中主要考虑的几个问题。
This paper describes in a systematic way a newly-developed off-centre measurement system with high proeision. This method is based on the method of rotation.
本文描述使用以阻抗测量仪为中心的正偏电容测量系统提取金属-半导体接触界面态参数的方法。
This paper presents a forward-bias capacitance measurement system based on HP 4274AL-C-R meter for extracting the parameters of interface states of metal-semiconductor contacts.
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