MOS结构中光注入时外电路电流特性与绝缘膜中陷阱俘获截面密切相关。
The external circuit current of photoinjection in MOS structures is closely related to the capture cross section of traps.
由此证明，光释光发光曲线与热释光发光曲线都是不同能级陷阱中的电子跃迁表现。
The results showed that from the same sample, a number of photon response levels could be stimulated at different laser energies…
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