掺杂是制备硅纳米线半导体器件的一个有效手段。
Doping of silicon nanowire is one of effective means to manufacture silicon nanowire semi -conductor devices.
公开了一种在单晶硅生长过程中使用的掺杂硅熔体的制备方法。
A process for preparing doped molten silicon for use in a single silicon crystal growing process is disclosed.
所注入的掺杂剂在硅层中具有第一掺杂剂分布。
The implanted dopant has a first dopant profile in the silicon layer.
应用推荐