porous ZnO film 多孔ZnO薄膜
granular ZnO film ZnO颗粒膜
wurtzite ZnO film 六方ZnO晶体薄膜
textured ZnO film 绒面ZnO薄膜
p-type ZnO film p型ZnO薄膜
N-doped ZnO film 氮掺杂氧化锌薄膜
Al doped ZnO film Al掺杂ZnO薄膜
Ge doped ZnO film Ge掺杂ZnO薄膜
In addition strain can induce piezoelectricity in ZnO film and it will affect the life of device in the future.
此外膜内应变会诱导压电场，从而影响将来器件的寿命。
The present invention relates to the MOCVD equipment and process of growing semiconductor ZnO film with wide band gap.
本发明涉及一种用于生长宽带隙半导体氧化锌薄膜的MOCVD设备及其工艺。
In this paper, theories of ZnO film p-type doping are introduced in several aspects, including self-compensation effect, madelung energy, and thermodynamics.
本文分别从自补偿效应，马德隆能以及热力学等角度介绍了氧化锌薄膜的p型掺杂的理论研究。
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