As the demand increasing steadily for small volume, high density and high heat-dissipation rate IC, the key parameter of wire bonding — pad pitch has to shrink in accordance.
由于市场对小体积、高集成度和高散热率芯片的需求量与日俱增，引线键合工艺的关键参数——焊盘间距也不断缩小以满足市场要求。
If the Al film on the bond pad is pierced through by the probe in wafer probing, the wire bonding strength and device reliability would be affected.
在芯片测试中，若引线焊盘上的铝层被探针扎穿，就会影响引线键合的牢固性和器件的可靠性。
Through the silicon bonding, we achieve a wafer-level vacuum package, and the wire-bonding PAD is made after the fabrication is complete.
在完成整体结构圆片级真空封装的同时，通过引线腔结构方便地实现了中间电极的引线。
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