The formation and stability of VBLs in the hard domains is very important to design and use ofBLM.
硬磁畴畴壁中垂直布洛赫线的形成及其稳定性的研究，对布洛赫线存储器（BLM）的研制与使用具有重要意义。
The influence of the magnetostatic interaction between vertical Bloch lines (VBLs) on the stability of hard domains in garnet bubble films subjected to a magnetostatic bias field is investigated.
研究石榴石磁泡膜在直流偏磁场作用下布洛赫线间的静磁作用对硬磁畴稳定性的影响。
Considering the formation conditions of hard domains, it is reasonable to deduce that the increase of the number of VBLs in their walls leads to substantial change of their static characteristics.
从形成条件可以合理地推论，畴壁中VBL数目的增加导致硬磁畴静态特性的质的变化。
应用推荐