The first plate electrode is formed on a second inner connection structure provided under the dielectric etch stop layer.
该第一平板电极形成于设于该介电蚀刻停止层下的一第二内连接结构之上。
The uniform sol gel derived silicon dioxide film was prepared under optimal conditions. DFVP was applied to etch this film. The photolithography patterns was obtained due to the different etch…
并将无显影气相光刻的方法应用于这种二氧化硅膜的刻蚀,通过优化后的光刻工艺参数得到了反差明显的光刻图形。
Moreover, the acid will further etch the fracture face and create deeper channels which leads to high fracture conductivity and better treatment effect even under high closure stress.
酸液在裂缝壁面上进一步刻蚀形成较深的沟槽,即使在高的闭合应力条件下,酸蚀裂缝也能保持较高的导流能力,从而改善酸压效果。
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