thermal oxide layer 热氧化层
thermal oxide growth 热氧化生长 ; 进行热氧化成长
Thermal Oxide Method 热氧化法
thermal oxide advance 热氧化生长
thermal oxide band 热氧化层
thermal oxide film 热氧化膜
thermal oxide aging 抗热氧老化
The first important thin film from the thermal oxide group is the gate oxide layer under which a conducting channel can be formed between the source and the drain.
第一个重要的来自热氧化组薄膜是栅氧化层，在它之下，源和漏之间就能形成导电通道。
Wafer pairs with bonding interface being native oxide or thermal oxide have different bonding behavior in the annealing process, which were investigated and compared.
将硅本征氧化层与硅热氧化层两种键合界面在退火过程中的行为进行了理论分析与比较。
So the problem is coming that SiO gaseous unstable matter is made in the interface of silicon and silicon dioxide due to silicon and oxygen incomplete reaction when making thermal oxide layer.
因此随之而来的问题是：由于在形成热氧化物的时候，由于硅和氧的不完全反应，在硅和二氧化硅的界面会生成一氧化硅的气态不稳定物质。
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