The effect of polarity of the applied voltage on TDDB was investigated.

观察了所加电压极性对TDDB的影响。

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TDDB(time-dependent dielectric breakdown)is a key method to value the quality of thin gate oxide.

经时绝缘击穿（TDDB）是评价薄栅氧化层质量的重要方法。

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Hot-carrier enhanced TDDB effect of ultra-thin gate oxide is investigated by using substrate hot-carrier injection technique.

本文通过衬底热载流子注入技术，研究了热载流子增强的超薄栅氧化层TDDB效应。

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