polishing slurry 抛光液
acid polishing slurry 酸性抛光液
alkaline polishing slurry 碱性抛光液
Nanosphere polishing slurry 纳米球抛光液
nano-diamond polishing slurry 纳米金刚石抛光液
The parameters deciding the quality in polishing process are as follows: slurry, temperature, wafering time, and so on.
抛光过程中决定抛光质量的参数有：抛光浆体、抛光温度、抛光时间等。
The mechanism of W-CMP was analyzed, the slurry makes a dual function of chemical erosion and mechanical lapping, has an important influence on the polishing rate.
分析了W - CMP的机理，抛光液对W材料表面具有化学腐蚀和机械研磨的双重作用，对抛光速率有着重要的影响。
Single stage re-circulation filtrations were performed to remove oversized particles from colloidal silica based Chemical-Mechanical Polishing (CMP) slurry.
单步循环过滤，用来去除胶体硅基化学机械抛光(CMP)磨料中尺寸过大的微粒。
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