Single electron transistors 使用单电子晶体 ; 单电子晶体
silicon single-electron transistors 硅基单电子晶体管
silicon single electron transistors 硅基单电子晶体管
A mathematical model of the I-V characteristics of single-electron transistors (SET's) is improved based on the orthodox single-electron theory.
基于正统单电子理论,提出了单电子晶体管的I - V特性数学算法改进模型。
Most of the fabrication methods of silicon single-electron transistors can be perfectly compatible with the si complementary metal-oxide-semiconductor (CMOS) technology.
大多数硅基单电子晶体管的制备方法可以很好地与主流的CMOS工艺兼容。
The structures, principles, characters and applications of single electron transistors are clarified, based on the traditional theories.
基于传统单电子理论,阐述了单电子晶体管的结构、原理、特点及应用。
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