polycrystalline silicon film 多晶硅薄膜
poly silicon film 多晶硅薄膜
SOS thin silicon film SOS薄硅膜
microcrystalline silicon film 微晶硅薄膜的
nano crystalline silicon film 纳米硅薄膜的
nano-crystalline silicon film 纳米硅薄膜
Iron silicon film 铁硅薄膜
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The structure and electrical properties of silicon film after ZMR are studied.
对区熔后的硅膜结构和电学性质进行了研究。
Experimental results show that the deposition rate of silicon film strongly depends on silane pressure and substrate temperature.
实验结果表明,非晶硅的沉积速率与气室气压和基片温度密切相关。
The researchers have made a 220-nanometer-thick silicon film that absorbs the same amount of light as an unpatterned film 25 times thicker.
研究者们已经制造出220纳米厚度的硅薄膜,相比于25倍厚的无图案薄膜,它能吸收同样数量的光。
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