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The technology and preliminary test results of Si bi-dimension position sensitive detector based on multi-strip structure fabricated by using planar technology were described in this paper.
描述了用平面工艺技术研制基于硅多条的两维位置灵敏探测器的制各工艺技术及性能测试初步结果。
The IR detector contains a focus plane array (FPA) which is fabricated into an array of bi-material microcantilevers in the form of single-layer membranous structure without Si-base.
此红外探测仪的核心器件焦平面阵列（FPA）由无硅基底结构的微悬臂梁阵列构成。
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