放电以直流或者交流（高频）方式进行，在高频时，会因自偏压（Self Bias Voltage）而在标靶一侧产生负电压。放电所产生的正离子在电压的影响下加速并发生碰撞，从而使标靶材料喷溅出来，附着在底板上。
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This paper introduces a low supply voltage band -gap reference circuit which used a self-bias cascode current mirror.
因此介绍了一种采用自偏置低压共源共栅电流源的带隙基准电路结构，用两个电阻代替了偏置电路。
Influence of discharge parameters such as RF power and working pressure on the negative self-bias voltage of substrate was investigated by an oscilloscope with a high voltage probe.
采用高压探头示波器系统研究了射频辉光放电参数对自偏压的影响规律。
Self-bias voltage of the dielectric substrate surface and voltage of the driven electrode were experimentally studied to improve the energy control of impinging ion in plasma processes.
在薄膜沉积和离子束刻蚀技术中，通常要给绝缘基片加上一个射频或脉冲电极，以便在绝缘基片上形成一个自偏压来控制轰击到绝缘基片表面的离子能量。
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