heavily sb-doped 重掺锑
sb-doped tin oxide 锑掺杂二氧化锡
Sb doped SnO2 electrode 掺锑二氧化锡电极
heavily Sb-doped silicon 重掺锑硅单晶
sb doped gas sensitive material 锑掺杂气敏材料
doped sb 掺锑
Powder microelectrode techniques were taken to study the electrochemical property of Sb-doped SnO2 nanopowders.
采用粉末微电极技术，对掺锑二氧化锡纳米粉末的电化学性质进行了研究。
After rapid thermal annealing(RTA) in Ar atmosphera at high temperature, the flow pattern defects(FPDs) density decreased more sharply in Sb-doped wafers than that in lightly B-doped wafers.
研究了掺杂剂原子种类及快速热处理技术对大直径直拉硅单晶中空洞型微缺陷密度的影响。
It is found that highly doped Sb films have characteristics of selflimiting electric current and selflimiting temperature.
发现高掺锑量的电热膜具有自限流和自限温特性，并分析了该特性对电热膜寿命的影响。
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