The effect of rapid thermal processing (RTP) on oxygen precipitates profile and denude zone (DZ) in Czochralski (CZ) silicon wafer during simulating CMOS processing is investigated.

本文研究了快速热处理工艺(RTP)在模拟的CMOS热处理工艺中对直拉硅单晶中氧沉淀和洁净区(DZ)的影响。

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Rapid thermal process (RTP) was used in the intrinsic gettering (IG) process of fast neutron irradiated CZSi.

将快速热处理（RTP）引入到快中子辐照掺氮直拉硅的内吸杂工艺中。

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Rapid thermal process (RTP) was first used in the intrinsic gettering (IG) process of fast neutron irradiated CZSi.

首次将快速热处理（RTP）引入到快中子辐照直拉硅的内吸杂工艺中。

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