The effect of rapid thermal processing (RTP) on oxygen precipitates profile and denude zone (DZ) in Czochralski (CZ) silicon wafer during simulating CMOS processing is investigated.
本文研究了快速热处理工艺(RTP)在模拟的CMOS热处理工艺中对直拉硅单晶中氧沉淀和洁净区(DZ)的影响。
The annihilation of grown-in oxygen precipitates in heavily As-doped CZ silicon by rapid thermal processing (RTP) was investigated.
研究了高温快速热处理（RTP）对重掺砷直拉硅片中的原生氧沉淀的消融作用。
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