Silverthorne是专门为了亚笔记本设备从头开始设计的，而对高-K材料的使用是“自1960年代后期推出多晶硅栅(Polysilicon Gate)金属氧化物半导体(MOS)以来，电晶体技术的最大突破。”英特尔的联合创始人戈登·摩尔(Gordon Moore)今年早些时候这么评价。
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polysilicon gate ccd 多晶硅栅电荷耦合掐 ; 多晶硅栅电荷耦合装置
dual polysilicon gate 双多晶硅栅
polysilicon gate mos 硅栅mos
polysilicon gate device 多晶硅栅器件
double-polysilicon-gate 双多晶硅栅
double doped polysilicon gate 双掺杂多晶硅栅
gate polysilicon 多硅门
Other silicide layers (50.4-50.6) are on the tops of the source, drain and polysilicon gate.
其它硅化物层(50.4 - 50.6)处于源极、漏极和多晶硅栅极的顶部。
Typically used in the transistor element called the gate, polysilicon has been part of the standard chip-manufacturing process for decades.
多晶硅常用在被称作门的晶体管元件中，已在标准的芯片制造工艺中使用了几十年。
This paper briefly describes the structure and principle of newly developed linear-array buried-channel CCD (BCCD) with 3-phase, polysilicon overlay-gate, and, experimental results are presented.
本文对已研制成的线阵三相多晶硅交迭栅埋沟CCD (BCCD)摄象器件的结构、原理及实验、结果做一个简要的阐述。
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