The polycrystalline silicon layer is formed on the oxide layer and used for serving as an upper electrode plate of the high-voltage capacitor.

多晶硅层是形成于氧化层上，用以作为高压电容的上电极板。

youdao

The high-voltage capacitor structure comprises a two-step diffusion drain electrode structural layer, an oxide layer and a polycrystalline silicon layer.

高压电容结构包括双重扩散漏极结构 层、氧化层及多晶硅层。

youdao

The gate electrodes (16) of the NMOS transistors (a) are formed in a layer of n-type doped polycrystalline silicon (14) without germanium.

NMOS晶体管(A)的门电极(16)在n -型掺杂的不含锗的多晶硅层(14)上形成。

youdao