Differing from the usual model, the present model of PN diode consists of the effect of shunt conductance on the current.

与通常使用的PN结二极管模型不同，本文模型考虑了并联电导对电流的影响。

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It's shown that the C-V and I-V characteristics of silicon photovoltaic diode by forward bias are obviously different from forward characteristic of common PN junction diode by experiment.

通过实验发现高阻衬底浅结的紫外敏感硅光伏二极管的正向偏置c - V特性和I - V特性与一般PN结二极管的正向特性有明显地不同。

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The invention belongs to the technical field of microelectronics, and in particular discloses a PN (positive-negative) junction and Schottky junction mixed type diode and a preparation method thereof.

本发明属于微电子技术领域，具体公开了一种PN结和肖特基结混合式二极管及其制备方法。

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