plasma-deposited silicon nitride 等离子淀积氮化硅
This paper introduces the experiment condition and process to carry out hot cutting on silicon nitride ceramics materials with new self-made water-plasma arc equipment.
主要阐述了采用自制新型水介质等离子弧设备对氮化硅陶瓷材料进行加热辅助切削的试验条件及过程。
Hard and wear-resistant titanium nitride coatings were deposited by pulsed high energy density plasma technique on silicon nitride ceramic cutting tools at ambient temperature.
用高能量密度脉冲等离子体于室温下在氮化硅陶瓷刀具上成功沉积了高硬耐磨的氮化钛涂层。
Gallium nitride is grown by plasma-assisted molecular-beam epitaxy on (111) and (001) silicon substrates using hafnium nitride buffer layers.
氮化镓是增长了等离子体辅助(111)和分子束外延(001)硅衬底上氮化硅缓冲层使用铪。
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