压阻效应（Piezoresistive Effect）是指单晶硅材料在受到应力作用时产生应变，由于其原子结构内的能级改变，载流子迁移率及浓度发生变化，导致其电阻率发生剧烈变化...
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... piezoresistive element 压敏电阻元件 Piezoresistive Effect 压阻效应 ; 压致电阻效应 ; 阻效应 Piezoresistive Constant 压阻常数 ...
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阻效 piezoresistive effect 磁阻 magnetic drag; magnetic reluctance; magnetic resistance; magneticreluctance; magneto resistance=magnetoresistanc...
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The fundamental of diffused silicon pressure sensor is piezoresistive effect.
扩散硅压力传感器的基本原理是利用硅晶体的压阻效应。
参考来源 - 基于虚拟仪器的压力传感器自动补偿校正系统The study of MEMS devices based on the piezoresistive effect of doped silicon has several ten years history with widely applications.
基于掺杂硅压阻效应的MEMS器件研究已经有几十年的历史,并获得了广泛地应用。
参考来源 - GaAs基矢量水声传感器工艺设计及性能测试·2,447,543篇论文数据，部分数据来源于NoteExpress
They show that the film exhibits remarkable piezoresistive effect.
结果表明该薄膜有明显的压阻效应。
The piezoresistive effect is degraded with increasing micro - defects.
压阻效应随微缺陷增多而降低。
They are based on the principle of silicon piezoresistive effect, mobility change, and variable capacitance respectively.
各部分分别基于半导体压阻效应、电阻迁移率变化、极板间电容变化为原理制作而成。
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