Its photoelectric negative resistance characteristics were investigated both by experiment and numerical simulation and its equivalent circuit is proposed.

本文对它的光电负阻特性进行了数值模拟和实验研究，给出了器件等效电路。

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The structure can reduce the parasitic capacitance of the sensor, improve the negative resistance characteristics of the sensitive film, and be used in micro gyroscope.

该结构降低了器件的寄生电容，改善了敏感薄膜的负阻特性，适用于共振隧穿效应陀螺。

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According to the distribution of potential, electron and hole in the BNRT at different stages, the mechanism inducing S-type negative resistance characteristics is explained.

根据BNRT不同工作状态下的内部电势、电子浓度和空穴浓度分布，解释了其S型负阻特性的产生机理。

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